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ELM34406AA-N Datasheet(PDF) 2 Page - ELM Electronics |
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ELM34406AA-N Datasheet(HTML) 2 Page - ELM Electronics |
2 / 4 page 2 ELM34406AA-N 4 - ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit Note STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 40 V Zero gate voltage drain current Idss Vds=32V, Vgs=0V 1 μA Vds=30V, Vgs=0V, Ta=125°C 10 Gate-body leakage current Igss Vds=0V, Vgs=±20V ±250 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 1.5 2.5 V On state drain current Id(on) Vgs=10V, Vds=10V 20 A 1 Static drain-source on-resistance Rds(on) Vgs=10V, Id=7.5A 21 28 mΩ 1 Vgs=4.5V, Id=6.5A 30 42 mΩ Forward transconductance Gfs Vds=10V, Id=7.5A 19 S 1 Diode forward voltage Vsd If=Is, Vgs=0V 1 V 1 Max. body-diode continuous current Is 1.3 A Pulsed body-diode current Ism 2.6 A 3 DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=10V, f=1MHz 790 pF Output capacitance Coss 175 pF Reverse transfer capacitance Crss 65 pF SWITCHING PARAMETERS Total gate charge Qg Vgs=10V, Vds=20V, Id=7.5A 16.0 nC 2 Gate-source charge Qgs 2.5 nC 2 Gate-drain charge Qgd 2.1 nC 2 Turn-on delay time td(on) Vgs=10V, Vds=20V, Id=1A Rgen=6Ω 2.2 4.4 ns 2 Turn-on rise time tr 7.5 15.0 ns 2 Turn-off delay time td(off) 11.8 21.3 ns 2 Turn-off fall time tf 3.7 7.4 ns 2 Body diode reverse recovery time trr If=5A, dIf/dt=100A/μs 15.5 ns Body diode reverse recovery charge Qrr If=5A, dIf/dt=100A/μs 7.9 nC NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%; 2. Independent of operating temperature; 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. Single N-channel MOSFET Ta=25°C. Unless otherwise noted. |
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