2

ELM34406AA-N

4 -

■Electrical characteristics

Parameter

Symbol

Condition

Min. Typ. Max. Unit Note

STATIC PARAMETERS

Drain-source breakdown voltage

BVdss Id=250μA, Vgs=0V

40

V

Zero gate voltage drain current

Idss

Vds=32V, Vgs=0V

1

μA

Vds=30V, Vgs=0V, Ta=125°C

10

Gate-body leakage current

Igss Vds=0V, Vgs=±20V

±250 nA

Gate threshold voltage

Vgs(th) Vds=Vgs, Id=250μA

1.0

1.5

2.5

V

On state drain current

Id(on) Vgs=10V, Vds=10V

20

A

1

Static drain-source on-resistance

Rds(on)

Vgs=10V, Id=7.5A

21

28

mΩ

1

Vgs=4.5V, Id=6.5A

30

42

mΩ

Forward transconductance

Gfs Vds=10V, Id=7.5A

19

S

1

Diode forward voltage

Vsd If=Is, Vgs=0V

1

V

1

Max. body-diode continuous current

Is

1.3

A

Pulsed body-diode current

Ism

2.6

A

3

DYNAMIC PARAMETERS

Input capacitance

Ciss

Vgs=0V, Vds=10V, f=1MHz

790

pF

Output capacitance

Coss

175

pF

Reverse transfer capacitance

Crss

65

pF

SWITCHING PARAMETERS

Total gate charge

Qg

Vgs=10V, Vds=20V, Id=7.5A

16.0

nC

2

Gate-source charge

Qgs

2.5

nC

2

Gate-drain charge

Qgd

2.1

nC

2

Turn-on delay time

td(on)

Vgs=10V, Vds=20V, Id=1A

Rgen=6Ω

2.2

4.4

ns

2

Turn-on rise time

tr

7.5

15.0

ns

2

Turn-off delay time

td(off)

11.8 21.3

ns

2

Turn-off fall time

tf

3.7

7.4

ns

2

Body diode reverse recovery time

trr

If=5A, dIf/dt=100A/μs

15.5

ns

Body diode reverse recovery charge

Qrr If=5A, dIf/dt=100A/μs

7.9

nC

NOTE :

1. Pulsed width≤300μsec and Duty cycle≤2%;

2. Independent of operating temperature;

3. Pulsed width limited by maximum junction temperature.

4. Duty cycle ≤ 1%.

Single N-channel MOSFET

Ta=25°C. Unless otherwise noted.