IDT71T75602S150PFI datasheet(5/25 Pages) IDT

Part #	IDT71T75602S150PFI

Description	512K x 36, 1M x 18 2.5V Synchronous ZBT??SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Download	25 Pages

Scroll/Zoom	100%

Manufacturer	IDT [Integrated Device Technology]

Direct Link	http://www.idt.com

Logo

5 / 25 page

6.42

IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT™ SRAMs with

2.5V I/O, Burst Counter, and Pipelined Outputs

Commercial and Industrial Temperature Ranges

5

Absolute Maximum Ratings(1)

Pin Configuration 1Mx 18

100-Pin TQFP Capacitance

(TA = +25°C, f = 1.0MHz)

NOTES:

1. Pins 14, 16, and 66 do not have to be connected directly to VDD as long as

the input voltage is

≥ VIH.

2. Pins 38, 39 and 43 will be pulled internally to VDD if not actively driven. To

disable the TAP controller without interfering with normal operation, several

settings are possible. Pins 38, 39 and 43 could be tied to VDD or VSS and

pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK)

pins 38, 39 and 43 could be left unconnected “NC” and the JTAG circuit

will remain disabled from power up.

3. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin

TQFP package for the 36M ZBT device.

Top View

100 TQFP

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VDD terminals only.

3. VDDQ terminals only.

4. Input terminals only.

5. I/O terminals only.

6. This is a steady-state DC parameter that applies after the power supply has

reached its nominal operating value. Power sequencing is not necessary;

however, the voltage on any input or I/O pin cannot exceed VDDQ during power

supply ramp up.

7. During production testing, the case temperature equals TA.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

Symbol

Rating

Commercial

Industrial

Unit

VTERM

(2)

Terminal Voltage with

Respect to GND

-0.5 to +3.6

V

VTERM

(3,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD

V

VTERM

(4,6)

Terminal Voltage with

Respect to GND

-0.5 to VDD +0.5

V

VTERM

(5,6)

Terminal Voltage with

Respect to GND

-0.5 to VDDQ +0.5

V

TA

(7)

Operating Ambient

Temperature

0 to +70

-40 to +85

oC

TBIAS

Temperature Under Bias

-55 to +125

oC

TSTG

Storage Temperature

-55 to +125

oC

PT

Power Dissipation

2.0

W

IOUT

DC Output Current

50

mA

5313 tbl 06

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

5

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5313 tbl 07

100 99 98 97 96 95 94 93 92 91 90

87 86 85 84 83 82 81

89 88

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

NC

VDDQ

VSS

NC

I/OP2

I/O15

I/O14

VSS

VDDQ

I/O13

I/O12

VSS

VDD

I/O11

I/O10

VDDQ

VSS

I/O9

I/O8

NC

VSS

VDDQ

NC

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

NC

VDDQ

VSS

NC

I/OP1

I/O7

I/O6

VSS

VDDQ

I/O5

I/O4

VSS

VDD

I/O3

I/O2

VDDQ

VSS

I/O1

I/O0

NC

VSS

VDDQ

NC

5313 drw 02a

VDD(1)

NC

VDD(1)

NC

VDD(1)

A10

ZZ

,

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5313 tbl 07a

Symbol

Parameter

(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

7

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5313 tbl 07b

165 fBGA Capacitance

(TA = +25°C, f = 1.0MHz)

119 BGA Capacitance

(TA = +25°C, f = 1.0MHz)

Similar Part No. - IDT71T75602S150PFI

Manufacturer	Part #	Datasheet	Description
Integrated Device Techn...	IDT71T75602	1Mb / 23P	Synchronous ZBT SRAMs
	IDT71T75602	260Kb / 26P	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
	IDT71T75602	1Mb / 23P	Synchronous ZBT SRAMs
	IDT71T75602	260Kb / 26P	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

More results

Similar Description - IDT71T75602S150PFI

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	71T75602	348Kb / 28P	512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Sep.27.21
Integrated Device Techn...	IDT71T75702	636Kb / 26P	512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs
	IDT71V65602	970Kb / 26P	256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
	IDT71V2546S	1,004Kb / 28P	128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
	IDT71V2556S	1,019Kb / 28P	128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
	IDT71T75602	260Kb / 26P	2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs
Renesas Technology Corp	71V2556S	298Kb / 25P	128K x 36 3.3V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Aug.20.20
Integrated Device Techn...	IDT71V67602	975Kb / 22P	256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
Renesas Technology Corp	IDT71V67602	540Kb / 24P	256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect FEBRUARY 2009
Renesas Technology Corp	71T75902	298Kb / 24P	1M x 18 2.5V Synchronous ZBT™ SRAM 2.5V I/O, Burst Counter Flow-Through Outputs Apr.07.20

More results

IDT71T75602S150PFI Datasheet(PDF) 5 Page - Integrated Device Technology

IDT71T75602S150PFI Datasheet(HTML) 5 Page - Integrated Device Technology

Similar Part No. - IDT71T75602S150PFI

Similar Description - IDT71T75602S150PFI

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

Datasheet Download

Link URL