FLASH MEMORY

1

Preliminary

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

Document Title

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Revision No

0.0

0.1

0.2

0.3

0.4

Remark

Advance

Preliminary

Preliminary

Preliminary

Preliminary

History

1. Initial issue

1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 35)

The min. Vcc value 1.8V devices is changed.

K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

Few current value is changed.

Before

Unit : us

After

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

3. Pb-free Package is added.

K9F2G08Q0M-PCB0,PIB0

K9F2G08U0M-PCB0,PIB0

K9F2G16U0M-PCB0,PIB0

K9F2G16Q0M-PCB0,PIB0

K9F2GXXQ0M

K9F2GXXU0M

Typ.

Max.

Typ.

Max.

20

100

20

100

-

±20

-

±20

-

±20

-

±20

K9F2GXXQ0M

K9F2GXXU0M

Typ.

Max.

Typ.

Max.

10

50

10

50

-

±10

-

±10

-

±10

-

±10

Draft Date

Sep. 19.2001

Nov. 22. 2002

Mar. 6.2003

Apr. 2. 2003

Apr. 9. 2003