FLASH MEMORY

2

Preliminary

K9F2G08Q0M K9F2G16Q0M

K9F2G08U0M K9F2G16U0M

Document Title

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

Revision No

0.5

0.6

Remark

Preliminary

History

1. The value of AC parameters for K9F2G08U0M are changed.

2. The definition and value of setup and hold time are changed.

3. The tADL(Address to Data Loading Time) is added.

- tADL Minimum 100ns (Page 11, 22~25)

to the WE rising edge of first data cycle at program operation.

4. Added addressing method for program operation

1. PKG(TSOP1, WSOP1) Dimension Change

ITEM

K9F2G08U0M

Before

After

45

30

25

15

15

10

50

30

25

15

15

10

30

18

45

23

-

100

ITEM

K9F2G16U0M

K9F2GXXQ0M

K9F2G08U0M

25

10

10

5

35

15

10

5

25

10

10

5

20

10

10

5

Draft Date

Apr. 22.2004

May. 19. 2004