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MBR10100CD-E1 Datasheet(PDF) 5 Page - Diodes Incorporated |
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MBR10100CD-E1 Datasheet(HTML) 5 Page - Diodes Incorporated |
5 / 13 page MBR10100C Document number: DS36953 Rev. 4 - 2 5 of 13 www.diodes.com July 2015 © Diodes Incorporated MBR10100C Maximum Ratings (Each Diode Leg) (Note 4) Characteristic Symbol Rating Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = +136C IF(AV) 5 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC = +134C IFRM 10 A Non Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) IFSM 100 A Operating Junction Temperature Range (Note 5) TJ +150 C Storage Temperature Range TSTG -55 to +150 C Voltage Rate of Change (Rated VR) dv/dt 10000 V/µs ESD (Machine Model = C) – > 400 V ESD (Human Body Model = 3B) – > 8000 V Notes: 4. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyo nd those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. 5. The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA. Thermal Characteristics Characteristic Symbol Rating Unit Maximum Thermal Resistance (Junction to Case) (Note 6) RθJC TO-220-3 (2)/TO-252-2 (1) 3.0 oC/W TO-220F-3 (Option 1) 4.5 TO-263-2 2.0 Maximum Thermal Resistance (Junction to Ambient) (Note 6) RθJA TO-220-3 (2)/TO-252-2 (1) 60 oC/W TO-220F-3 (Option 1) 60 TO-263-2 50 Note 6: Device mounted on heat sink, with minimum recommended pad layout per http://www.diodes.com |
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