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RS1MDFQ Datasheet(PDF) 2 Page - Diodes Incorporated |
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RS1MDFQ Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 5 page RS1MDFQ Document number: DS38756 Rev. 2 - 2 2 of 5 www.diodes.com May 2016 © Diodes Incorporated RS1MDFQ Notes: Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage (Note 6) VRRM VRWM VR 1,000 V RMS Reverse Voltage VR(RMS) 700 V Average Rectified Output Current @ TA = +100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) RθJT 31 °C/W Typical Thermal Resistance, Junction to Air (Note 7) RθJA 83 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads. 7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads. 8. Short duration pulse test used to minimize self-heating effect. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( C) A ° Figure 1 DC Forward Current Derating Note 6 Note 7 0.01 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 T = 25°C A T = 85°C A T = 125°C A T = 150°C A T = 100°C A T = -55°C A Figure 2 Typical InstantanousForward Voltage V , INSTANTANEOUS FORWARD VOLTAGE (V) F Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 8) V(BR)R 1,000 — — V IR = 10µA Forward Voltage Drop VF — 0.95 0.83 1.3 — V IF = 1A, TJ = +25°C IF = 1A, TJ = +125°C Leakage Current (Note 8) IR — 0.2 5 5 — µA VR = 1,000V, TJ = +25°C VR = 1,000V, TJ = +125°C Reverse Recovery Time tRR — 140 500 ns IF = 0.5A, IR = 1.0A, IRR = 0.25A Total Capacitance CT — 5 — pF VR = 4.0VDC, f = 1MHz |
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