RS1MDFQ

Document number: DS38756 Rev. 2 - 2

2 of 5

www.diodes.com

May 2016

© Diodes Incorporated

RS1MDFQ

Notes:

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage (Note 6)

1,000

V

RMS Reverse Voltage

700

V

Average Rectified Output Current

1.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Terminal (Note 7)

31

°C/W

Typical Thermal Resistance, Junction to Air (Note 7)

83

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

6. Device mounted on FR-4 substrate, 1" x 1", 2oz, single-sided, PC boards with 0.1" x 0.15" copper pads.

7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz, single-sided, PC boards with 0.2" x 0.25" copper pads.

8. Short duration pulse test used to minimize self-heating effect.

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

25

50

75

100

125

150

T , AMBIENT TEMPERATURE ( C)

A

°

Figure 1 DC Forward Current Derating

Note 6

Note 7

0.01

0.1

1

10

100

0.4

0.6

0.8

1.0

1.2

1.4

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

T = 100°C

A

T = -55°C

A

Figure 2 Typical InstantanousForward Voltage

V , INSTANTANEOUS FORWARD VOLTAGE (V)

F

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 8)

1,000

—

—

V

Forward Voltage Drop

—

0.95

0.83

1.3

—

V

Leakage Current (Note 8)

—

0.2

5

5

—

µA

Reverse Recovery Time

—

140

500

ns

0.25A

Total Capacitance

—

5

—

pF