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S1MDF-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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S1MDF-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 4 page S1MDF Document number: DS37914 Rev. 3 - 2 2 of 4 www.diodes.com June 2016 © Diodes Incorporated S1MDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage (Note 5) VRRM VRWM VR 1,000 V RMS Reverse Voltage VR(RMS) 700 V Average Rectified Output Current @ TA = +100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load IFSM 30 A Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) RθJT 34 °C/W Typical Thermal Resistance, Junction to Air (Note 7) RθJA 88 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 5) V(BR)R 1,000 V IR = 5µA Forward Voltage VF 0.94 0.84 1.1 V IF = 1A, TJ = +25°C IF = 1A, TJ = +125°C Reverse Leakage Current (Note 5) IR 0.11 0.004 5 µA mA VR = 1,000V, TJ = +25°C VR = 1,000V, TJ = +125°C Total Capacitance CT 6 pF VR = 4VDC, f = 1MHz Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Device mounted on FR-4 substrate, 1" x 1", 2oz., single-sided, PC boards with 0.1" x 0.15" copper pads. 7. Device mounted on FR-4 substrate, 0.4" x 0.5", 2oz., single-sided, PC boards with 0.2" x 0.25" copper pads. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 25 50 75 100 125 150 Note 6 Note 7 Figure 1 DC Forward Current Derating T , AMBIENT TEMPERATURE ( C) A ° 0.01 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 V , FORWARD VOLTAGE (V) F Figure 2 Instantaneous Forward Voltage T = 125°C A T = 150°C A T = 85°C A T = 25°C A T = -55°C A T = 100°C A |
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