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ZXGD3110N8 Datasheet(PDF) 6 Page - Diodes Incorporated |
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ZXGD3110N8 Datasheet(HTML) 6 Page - Diodes Incorporated |
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6 / 11 page  ZXGD3110N8 Document Number DS37336 Rev. 1 - 2 6 of 11 www.diodes.com December 2015 © Diodes Incorporated ZXGD3110N8 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit VAVDD Internal Regulator Output VCC = 5.5V — 4.5 — V VCC = 12V — 4.7 — V ICCSTART Supply Current (Undervoltage) VCC = 2.6V — 160 220 µA ICCON Supply Current (Enabled) VCC = 5.5V, FSW = 100kHz CGATE = 0pF — 1.5 1.8 mA VCC = 12V, FSW = 100kHz CGATE = 0pF — 1.8 2.2 VCC = 5.5V, FSW = 100kHz CGATE = 3,300pF — 3.2 4 VCC = 12V, FSW = 100kHz CGATE = 3,300pF — 5 7 Undervoltage Lockout (UVLO) UVLOTH VCC Undervoltage Lockout Threshold Rising — 2.8 3.0 3.20 V UVLOHYS VCC Undervoltage Lockout Threshold Hysteresis — — 200 — mV MOSFET Voltage Sensing VTHARM Gate Re-Arming Threshold VD to GND, Rising -1.3 -1.5 -1.7 V VTHON Gate Turn-On Threshold (VD-VS) Falling, VS = 0V -220 -150 -80 mV VTHOFFLV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC < 4.3V -30 -20 -10 mV VTHOFFHV Gate Turn-Off Threshold (VD-VS) Rising, VS = 0V, VCC > 4.3V -10 -4 -1 mV TD(ON) Gate Turn-On Propagation Delay From VTHON to Gate > 1V — 30 52 ns TD(OFF) Gate Turn-Off Propagation Delay From VTHOFF to Gate < 4V — 30 62 ns Minimum On-Time TON-LR Minimum On-Time Low Resistance RTON = 8.25kΩ 0.26 0.34 0.42 µs TON-HR Minimum On-Time High Resistance RTON = 100kΩ 2.2 3 3.8 µs Synchronization VTHSYNC SYNC Falling Threshold Gate Output from High to Low VAVDD-2.4 VAVDD-2.0 VAVDD-1.6 V TSDLY SYNC Propagation Delay (Note 8) SYNC Falling to Gate Falling 10%, 4.5V < VCC < 5.5V — 40 — ns RSYNC SYNC Pull Up Resistance (Note 8) Internal Resistance from SYNC to VCC, 4.5V < VCC < 5.5V — 2.0 — k Ω |
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