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NCP716MT33TBG Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP716MT33TBG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 18 page NCP716 www.onsemi.com 3 Table 4. ELECTRICAL CHARACTERISTICS Voltage version 1.2 V −40 °C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage IOUT ≤ 10 mA VIN 2.5 24 V 10 mA < IOUT < 80 mA 3.0 24 Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.164 1.2 1.236 V Turn−On Time IOUT = 1 mA tON − 700 − ms Undervoltage Lock−Out VIN rising UVLO − 2.1 − V Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 30 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 20 mV Dropout voltage (Note 3) VDO − mV Maximum Output Current (Note 6) IOUT 110 mA Ground current 0 < IOUT < 80 mA, −40 < TA < 85°C IGND 3.2 4.2 mA 0 < IOUT < 80 mA, VIN = 24 V 5.8 mA Power Supply Rejection Ratio VIN = 3.0 V, VOUT = 1.2 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz PSRR 63 dB Output Noise Voltage VOUT = 1.2 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 105 mVrms Thermal Shutdown Temperature (Note 4) Temperature increasing from TJ = +25°C TSD 155 °C Thermal Shutdown Hysteresis (Note 4) Temperature falling from TSD TSDH − 25 − °C 3. Not Characterized at VIN = 3.0 V, VOUT = 1.2 V, IOUT = 80 mA 4. Guaranteed by design and characterization. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25 °C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Respect SOA |
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