BC856BDW1T1D datasheet(3/6 Pages) ONSEMI

Part #	BC856BDW1T1D

Description	Dual General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series

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TYPICAL CHARACTERISTICS − BC856

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 2. “On” Voltage

IC, COLLECTOR CURRENT (mA)

−0.8

−1.0

−0.6

−0.2

−0.4

1.0

2.0

−0.1

−1.0

−10

−200

−0.2

0.2

0.5

−0.2

−1.0

−10

−200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = −5.0 V

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

−1.0

−1.2

−1.6

−2.0

−0.02

−1.0

−10

0

−20

−0.1

−0.4

−0.8

−0.2

−2.0

−10

−200

−1.0

TJ = 25°C

IC =

−10 mA

VCE = −5.0 V

TA = 25°C

0

−0.5

−2.0

−5.0

−20

−50 −100

−0.05

−0.2

−0.5

−2.0

−5.0

−100 mA

−20 mA

−1.4

−1.8

−2.2

−2.6

−3.0

−0.5

−5.0

−20

−50 −100

−55°C to 125°C

qVB for VBE

−2.0 −5.0

−20

−50 −100

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

40

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

−0.1 −0.2

−1.0

−50

2.0

−2.0

−10

−100

100

200

500

50

20

10

6.0

4.0

−1.0

−10

−100

VCE = −5.0 V

−0.5

−5.0

−20

TJ = 25°C

Cob

Cib

8.0

−50 mA

−200 mA

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