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BC850 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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BC850 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 3 page  SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - APRIL 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC856A3A BC858C3L BC856 BC846 BC856BZ3B BC859AZ4A BC857 BC847 BC857AZ3E BC859B4B BC858 BC848 BC857B3F BC859CZ4C BC859 BC849 BC857C3G BC860AZ4E BC860 BC850 BC858A3J BC860B4F BC858B3K BC860C4GZ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BC856 BC857 BC858 BC859 BC860 UNIT Collector-Base Voltage VCBO -80 -50 -30 -30 -50 V Collector-Emitter Voltage VCES -80 -50 -30 -30 -50 V Collector-Emitter Voltage VCEO -65 -45 -30 -30 -45 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -100 mA Peak Pulse Current IEM -200 mA Base Current IBM -200 mA Base Current IEM -200 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL BC856 BC857 BC858 BC859 BC860 UNIT CONDITIONS. Collector Cut-Off Current ICBO Max -15 nA VCB= -30V Max -4 µ A VCB= -30V Tamb=150°C Collector-Emitter Saturation Voltage VCE(sat) Typ Max. -75 -300 -75 -300 -75 -300 -75 -250 -75 -250 mV IC=-10mA, IB=-0.5mA Typ Max. -250 -650 mV IC=-100mA, IB=-5mA Typ Max. -300 -600 mV IC=-10mA* Base-Emitter Saturation Voltage VBE(sat) Typ -700 mV IC=-10mA, IB=-0.5mA Typ -850 mV IC=-100mA, IB=-5mA Base-Emitter Voltage VBE Min Typ Max -600 -650 -750 -600 -650 -750 -600 -650 -750 -580 -650 -750 -580 -650 -750 mV IC=-2mA VCE=-5V Max -820 mV IC=-10mA VCE=-5V * Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the operating point IC= 11mA, VCE= 1V at constant base current. BC856 BC857 BC858 BC859 BC860 C B E SOT23 |
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Similar Description - BC850 |
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