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AM4N60D Datasheet(PDF) 4 Page - Analog Power |
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AM4N60D Datasheet(HTML) 4 Page - Analog Power |
4 / 5 page Analog Power AM4N60D 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature Typical Electrical Characteristics 0 2 4 6 8 10 0 5 10 15 Qg - Total Gate Charge (nC) 1 10 10 uS 100 uS 1 mS 10 mS 100 mS 1 SEC 200 250 300 350 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 TJ -JunctionTemperature(°C) VDS = 100V ID = 2A © Preliminary 4 Publication Order Number: DS_AM4N60D_1A 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 11. Normalized Thermal Transient Junction to Ambient 0.01 0.1 0.1 1 10 100 1000 10000 VDS Drain to Source Voltage (V) 1 SEC 10 SEC 100 SEC DC Idm limit Limited by RDS 1 0 50 100 150 0.001 0.01 0.1 1 10 100 t1 TIME (SEC) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t1 TIME (sec) D = 0.5 0.2 0.1 0.05 0.02 Single Pulse R θJA(t) = r(t) + RθJA TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 R θJA = 40 °C /W © Preliminary 4 Publication Order Number: DS_AM4N60D_1A |
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