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AM8N80P Datasheet(PDF) 1 Page - Analog Power |
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AM8N80P Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM8N80P N-Channel 800-V (D-S) MOSFET VDS (V) ID (A) 800 8 a Symbol Limit Units VDS 800 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage PRODUCT SUMMARY rDS(on) ( ) 1.5 @ VGS = 10V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM8N80P_1A VDS 800 VGS ±20 Continuous Drain Current a TC=25°C ID 8 IDM 50 TC=25°C IS 8 A Power Dissipation a TC=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. Pulsed Drain Current b THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range V Drain-Source Voltage Continuous Source Current (Diode Conduction) a Maximum Junction-to-Ambient C Maximum Junction-to-Case Gate-Source Voltage A © Preliminary 1 Publication Order Number: DS_AM8N80P_1A |
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