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AM50N10-55FP Datasheet(PDF) 1 Page - Analog Power |
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AM50N10-55FP Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM50N10-55FP N-Channel 100-V (D-S) MOSFET VDS (V) ID (A) Symbol Limit Units VDS 100 VGS ±20 Continuous Drain Current a TC=25°C ID 90 IDM 360 TC=25°C IS 90 A Power Dissipation a TC=25°C PD 500 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 0.29 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. A Maximum Junction-to-Ambient c Maximum Junction-to-Case Continuous Source Current (Diode Conduction) a Gate-Source Voltage PRODUCT SUMMARY 100 rDS(on) (mΩ) 42 @ VGS = 10V 48 @ VGS = 4.5V 90 a Pulsed Drain Current b THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • LED Inverter Circuits • DC/DC Conversion Circuits • Motor drives TO-247 DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AM50N10-55FP_1A |
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