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AM4562C Datasheet(PDF) 1 Page - Analog Power |
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AM4562C Datasheet(HTML) 1 Page - Analog Power |
1 / 7 page Analog Power AM4562C N & P-Channel 60-V (D-S) MOSFET VDS (V) ID (A) 7.2 6.5 5.9 5.3 Symbol Nch Limit Pch Limit Units VDS 60 -60 VGS ±20 ±20 TA=25°C 7.5 -4.2 TA=70°C 5.9 -3.3 IDM 20 -20 IS 2.8 -2.5 A TA=25°C 2.1 2.1 TA=70°C 1.3 1.3 TJ, Tstg °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 60 40 @ VGS = -10V 50 @ VGS = -4.5V PRODUCT SUMMARY rDS(on) (mΩ) 27 @ VGS = 10V 33 @ VGS = 4.5V -60 Parameter Drain-Source Voltage Gate-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) t <= 10 sec Maximum Junction-to-Ambient a Steady State RθJA A W °C/W Parameter THERMAL RESISTANCE RATINGS Continuous Drain Current a ID Power Dissipation a PD Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Operating Junction and Storage Temperature Range -55 to 150 V Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion Circuits • Motor Drives SO-8 © Preliminary 1 Publication Order Number: DS_AM4562C_1A |
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