AM6411P datasheet(1/5 Pages) ANALOGPOWER

Part #	AM6411P

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	ANALOGPOWER [Analog Power]

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AM6411P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM6411_D

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

TSSOP-8

Top View

D

S

1

2

3

S

D

G

P-Channel MOSFET

4

G

D

S

8

7

6

5

D

P-Channel 20-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

TSSOP-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

VDS (V)

rDS(on) m(Ω)ID (A)

13 @ VGS = -4.5V

-9.5

19 @ VGS = -2.5V

-7.9

35 @ VGS = -1.8V

-5.8

PRODUCT SUMMARY

-20

Symbol Maximum Units

VDS

-20

VGS

±12

TA=25

oC-9.5

TA=70

oC-7.7

IDM

-30

IS

-1.5

A

TA=25

oC1.8

TA=70

oC1.2

TJ, Tstg -55 to 150

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Symbol

Maximum

Units

t <= 10 sec

70

Steady State

115

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

RθJA

oC/W

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