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NCP551SN18T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP551SN18T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 12 page NCP551, NCV551 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS (continued) (Vin = Vout(nom.) + 1.0 V, VEN = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TA = 25°C, unless otherwise noted.) Output Short Circuit Current (Vout = 0 V) 1.4 V−2.0 V (Vin = 4.0 V) 2.1 V−3.0 V (Vin = 5.0 V) 3.1 V−4.0 V (Vin = 6.0 V) 4.1 V−5.0 V (Vin = 8.0 V) Iout(max) 160 160 160 160 350 350 350 350 600 600 600 600 mA 3. Maximum package power dissipation limits must be observed. PD + TJ(max) * TA R qJA 4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. NCP551 Tlow = −40°CThigh = +85°C NCV551 Tlow = −40°CThigh = +125°C. |
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