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K9K4G16U0M Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K9K4G16U0M
Description  512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9K4G16U0M Datasheet(HTML) 9 Page - Samsung semiconductor

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FLASH MEMORY
9
K9K4G08Q0M
K9K4G16Q0M
K9K4G08U0M
K9K4G16U0M
K9W8G08U1M
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9K4GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Page Read with
Serial Access
ICC1
tRC=50ns, CE=VIL
IOUT=0mA
-
10
20
-
15
30
mA
Program
ICC2
-
-
10
20
-
15
30
Erase
ICC3
-
-
10
20
-
15
30
Stand-by Current(TTL)
ISB1
CE=VIH, WP=PRE=0V/VCC
-
-
1
-
-
1
Stand-by Current(CMOS)
ISB2
CE=VCC-0.2,
WP=PRE=0V/VCC
-
20
100
-
20
100
µA
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±20
-
-
±20
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±20
-
-
±20
Input High Voltage
VIH*
-
0.8xVcc
-
VCC+0.3 0.8xVcc
-
VCC+0.3
V
Input Low Voltage, All inputs
VIL*
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Output High Voltage Level
VOH
K9K4GXXQ0M :IOH=-100
µA
K9XXGXXUXM :IOH=-400
µA
Vcc-0.1
-
-
2.4
-
-
Output Low Voltage Level
VOL
K9K4GXXQ0M :IOL=100uA
K9XXGXXUXM :IOL=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
IOL(R/B)
K9K4GXXQ0M :VOL=0.1V
K9XXGXXUXM :VOL=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXGXXUXM-XCB0
:TA=0 to 70
°C, K9XXGXXUXM-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9K4GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
VCC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9K4GXXQ0M(1.8V)
K9XXGXXUXM(3.3V)
Voltage on any pin relative to VSS
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
VCC
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9XXGXXUXM-XCB0
TBIAS
-10 to +125
°C
K9XXGXXUXM-XIB0
-40 to +125
Storage Temperature
K9XXGXXUXM-XCB0
TSTG
-65 to +150
°C
K9XXGXXUXM-XIB0
Short Circuit Current
Ios
5
mA


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