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PZT2222A Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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PZT2222A Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES MAXIMUM RATINGS (TA=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) PZT2222A (NPN) 1. BASE 3. EMITTER SOT-223 2. COLLECTO Epitaxial planar die construction Complementary PNP Type available (PZT2907A) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10μ A,IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=60V,VBE(off)=3V 10 nA Emitter cut-off current IEBO VEB= 3V , IC=0 10 nA hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 300 hFE(5) VCE=1V, IC= 150mA 50 DC current gain hFE(6) VCE=10V, IC= 500mA 40 VCE(sat) IC=500mA, IB= 50mA 1 V Collector-emitter saturation voltage VCE(sat) IC=150mA, IB= 15mA 0.3 V VBE(sat) IC=500mA, IB= 50mA 2.0 V Base-emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 1.2 V Transition frequency fT VCE=20V,IC= 20mA, f=100MHz 300 MHz Output Capacitance Cob VCB=10V, IE= 0,f=1MHz 8 pF Delay time td 10 nS Rise time tr VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf VCC=30V, IC=150mA IB1=-IB2= 15mA 60 nS |
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Similar Description - PZT2222A |
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