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NCP1855FCCT1G Datasheet(PDF) 7 Page - ON Semiconductor |
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NCP1855FCCT1G Datasheet(HTML) 7 Page - ON Semiconductor |
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7 / 26 page  NCP1855 www.onsemi.com 7 Table 4. ELECTRICAL CHARACTERISTICS Min & Max Limits apply for TA between −40°C to +85°C and TJ up to +125°C for VIN between 3.9 V to 7 V (Unless otherwise noted). Typical values are referenced to TA = + 25°C and VIN = 5 V (Unless otherwise noted). Symbol Unit Max Typ Min Conditions Parameter JUNCTION THERMAL MANAGEMENT TSD Thermal shutdown Rising 125 140 150 °C Falling 115 °C TH2 Hot temp threshold 2 Relative to TSD −7 °C TH1 Hot temp threshold 1 Relative to TSD −11 °C TWARN Thermal warning Relative to TSD −15 °C BUCK CONVERTER FSWCHG Switching Frequency − 1.5 − MHz Switching Frequency Accuracy −10 +10 % TDTYC Max Duty Cycle Average 99.5 % IPKMAX Maximum peak inductor current 3 A RONLS Low side Buck MOSFET RDSON (Q3) Measured between PGND and SW, VIN = 5 V − 70 110 m W RONHS High side Buck MOSFET RDSON (Q2) Measured between CAP and SW, VIN = 5 V − 55 85 m W PROTECTED TRANSCEIVER SUPPLY VTRANS Voltage on TRANS pin VIN ≥ 5 V 5 5.5 V ITRMAX TRANS current capability 50 mA ITROCP Short circuit protection 150 mA TIMING TWD Watchdog timer 32 s TUSB USB timer 2048 s TCHG1 Charge timer Safe−charge or pre−charge or weak−safe or weak−charge state. 3 h TCHG2 CC state 1 h CV state TIMER_SEL = 0 (default) 2 h TIMER_SEL = 1 1 h TWU Wake−up timer 64 s TST Charger state timer, Minimum transition time from states to states From Weak−Charge to Full−Charge State 32 s From wait−state to safe−charge and from weak−wait to weak−safe 127 ms All others state 16 ms TVRCHR Deglitch time for end of charge voltage detection VBAT rising 15 ms VBAT falling 127 ms TINDET Deglitch time for input voltage detection VIN rising 15 ms TDGS1 Deglitch time for signal crossing IEOC, VPRE, VSAFE, VCHGDET thresholds Rising and falling edge 15 ms TDGS2 Deglitch time for signal crossing VFET, VBUSUV, VBUSOV thresholds Rising and falling edge 1 ms |
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