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2SA1649-Z Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1649-Z Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION · Available for high-current control in small dimension · Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A · Fast switching speed · High DC current gain and excellent linearity · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · This transistor is ideal for use in Switching regulators, DC/DC converters,motor drivers,Solenoid drivers and other low-voltage power supply devices,as well as for high-current switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak NOTE1 -20 A PC Collector Power Dissipation @ TC=25℃ 15 W Collector Power Dissipation @Ta=25℃ NOTE2 1.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ NOTE1:PW≤300ms,Duty cycle ≤10% NOTE2:Printing boarding mounted |
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