S9015 datasheet(1/2 Pages) HOTTECH

Part #	S9015

Description	Plastic-Encapsulate Transistors

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Complimentary to S9014

MARKING: M6

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-50

V

Collector-Emitter Voltage

V

CEO

-45

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-0.1

A

Collector Power Dissipation

PC

0.2

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -100μA, IE=0

-50

V

Collector-emitter breakdown voltage

VCEO

IC = -0.1mA, IB=0

-45

V

Emitter-base breakdown voltage

VEBO

IE=-100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50 V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-5V, IC= -1mA

200

1000

Collector-emitter saturation voltage

VCE(sat)

IC=-100mA, IB= -10mA

-0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=-100mA, IB=-10mA

-1

V

Transition frequency

fT

VCE=-5V,

IC= -10mA

f=30MHz

150

MHz

CLASSIFICATION OF

hFE

Rank

L

H

Range

200-450

450-1000

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

S9015

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S9015 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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