Si4812DY

Vishay Siliconix

www.vishay.com

4

Document Number: 71775

S-41426—Rev. G, 26-Jul-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

10

20

30

40

50

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power (MOSFET)

Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET)

Square Wave Pulse Duration (sec)

Time (sec)

0.00

0.02

0.04

0.06

0.08

0.10

0

2468

10

2

1

0.1

0.01

10

100

600

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

1. Duty Cycle, D =

Notes:

4. Surface Mounted

50

1

0.1

10

600

100

10

1

0.1

0.01

1

125

150

0.0001

1

20

Reverse Current (Schottky)

0

255075

100

10 V

0.001

0.01

0.1

10

20 V

30 V