SOT-323 Plastic-Encapsulate MOSFETS

CJ3139KW

P-Channel Power MOSFET

GENERRAL DESCRIPTION

This Single P-Channel MOSFET has been designed using advanced

FEATURE

High-Side Switching

Low On-Resistance

Low Threshold

Fast Switching Speed

APPLICATION

Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

MARKING: 39K

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source voltage

-20

Gate-Source Voltage

±12

V

-0.66

Drain Current -Pulsed(note1)

-2.64

A

Power Dissipation (note 2)

200

mW

Thermal Resistance from Junction to Ambient

625

℃/W

Storage Temperature

150

Junction Temperature

-55 ~+150

℃

SOT-323

1. GATE

2. SOURCE

3. DRAIN

1 of 2

A,Dec,2010

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CJ3139KW