TC58FVXB-70 datasheet(6/48 Pages) TOSHIBA

Part #	TC58FVXB-70

Description	32-MBIT (4M 횞 8 BITS / 2M 횞 16 BITS) CMOS FLASH MEMORY

Download	48 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

6 / 48 page

TC58FVT321/B321FT/XB-70,-10

2002-08-06

6/48

SIMULTANEOUS READ/WRITE OPERATION

The TC58FVT321/B321 features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation

enables the device to simultaneously write data to or erase data from a bank while reading data from another bank.

The TC58FVT321/B321 has a total of nine banks: 1 bank of 0.5 Mbits, 1 bank of 3.5 Mbits and 7 banks of 4 Mbits.

Banks can be switched between using the bank addresses (A20~A15). For a description of bank blocks and addresses,

please refer to the Block Address Table and Block Size Table.

The Simultaneous Read/Write operation cannot perform multiple operations within a single bank. The table below

shows the operation modes in which simultaneous operation can be performed.

Note that during Auto-Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation

cannot read data from addresses in the same bank which have not been selected for operation. Data from these

addresses can be read using the Program Suspend or Erase Suspend function, however.

SIMULTANEOUS READ/WRITE OPERATION

STATUS OF BANK ON WHICH OPERATION IS BEING

PERFORMED

STATUS OF OTHER BANKS

Read Mode

ID Read Mode

(1)

Auto-Program Mode

Fast Program Mode

(2)

Program Suspend Mode

Auto Block Erase Mode

Auto Multiple Block Erase Mode

(3)

Erase Suspend Mode

Program Suspend during Erase Suspend

CFI Mode

Read Mode

(1) Only Command Mode is valid.

(2) Including times when Acceleration Mode is in use.

(3) If the selected blocks are spread across all nine banks, simultaneous operation cannot be carried out.

OPERATION MODES

In addition to the Read, Write and Erase Modes, the TC58FVT321/B321 features many functions including block

protection and data polling. When incorporating the device into a deign, please refer to the timing charts and

flowcharts in combination with the description below.

READ MODE

To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform

high-speed random access as asynchronous ROM.

The device is automatically set to Read Mode immediately after power-on or on completion of automatic

operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic

operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the

device and resets it to Read Mode. When reading data without changing the address immediately after power-on,

either input a hardware Reset or change CE from H to L.

Similar Part No. - TC58FVXB-70

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	TC58FV321	560Kb / 48P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
	TC58FVB004	1Mb / 26P	4M (512K x 8) BIT CMOS FLASH MEMORY
	TC58FVB004FT-10	1Mb / 26P	4M (512K x 8) BIT CMOS FLASH MEMORY
	TC58FVB004FT-12	1Mb / 26P	4M (512K x 8) BIT CMOS FLASH MEMORY
	TC58FVB004FT-85	1Mb / 26P	4M (512K x 8) BIT CMOS FLASH MEMORY

More results

Similar Description - TC58FVXB-70

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	TC58FVT641	593Kb / 53P	64-MBIT (8M 횞 8 BITS / 4M 횞 16 BITS) CMOS FLASH MEMORY
Winbond	W19B320ATB	491Kb / 53P	4M 횞 8/2M 횞 16 BITS 3V FLEXIBLE BANK FLASH MEMORY
Sharp Corporation	LHF32J06	2Mb / 50P	Flash Memory 32M (2M 횞 16/4M 횞 8)
Sharp Corporation	LHF32J02	3Mb / 51P	Flash Memory 32M (2M 횞 16/4M 횞 8)
Toshiba Semiconductor	TC58FVB160AF	539Kb / 41P	16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY
Toshiba Semiconductor	TC58FVT321FT-10	560Kb / 48P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
Winbond	W9812G6JH	662Kb / 42P	2M 횞 4 BANKS 횞 16 BITS SDRAM
	W9825G6DH	1Mb / 44P	4M 횞 4 BANKS 횞 16 BITS SDRAM
	W9812G6IH	665Kb / 42P	2M 횞 4 BANKS 횞 16 BITS SDRAM
Toshiba Semiconductor	TC58FVM7T2AFT65	622Kb / 69P	128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY 2004-09-01

More results

TC58FVXB-70 Datasheet(PDF) 6 Page - Toshiba Semiconductor

TC58FVXB-70 Datasheet(HTML) 6 Page - Toshiba Semiconductor

Similar Part No. - TC58FVXB-70

Similar Description - TC58FVXB-70

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

Datasheet Download

Link URL