PESD3USB3S datasheet(4/19 Pages) NXP

Part #	PESD3USB3S

Description	ESD protection for differential data lines

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Manufacturer	NXP [NXP Semiconductors]

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PESDXUSB3S_SER

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Product data sheet

Rev. 3 — 26 April 2016

4 of 19

NXP Semiconductors

PESDxUSB3S series

ESD protection for differential data lines

6.

Characteristics

6.1 Channel characteristics

[1]

This parameter is guaranteed by design.

[2]

100 ns Transmission Line Pulse (TLP); 50

; pulser at 70 to 90 ns.

[3]

According to IEC 61000-4-5 (8/20

s).

6.2 Frequency characteristics

[1]

Normalized to attenuation at 1 MHz.

Table 6.

Channel characteristics

Tamb =25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Cd

diode capacitance

f = 1 MHz; VI = 2.5 V

[1] -0.45

-pF

IRM

reverse leakage current

per line; VI = 5 V

-

1

100

nA

VBR

breakdown voltage

IR = 1 mA

69-

V

VF

forward voltage

IF =10mA

-

0.8

-

V

Rdyn

dynamic resistance

TLP

[2]

positive transient

-

0.16

-



negative transient

-

0.16

-



surge

[3]

positive transient

-

0.25

-



negative transient

-

0.25

-



Table 7.

Frequency characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Differential mode: S21dd

f3dB

cut-off frequency

[1] -17

-GHz

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