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LF442CN Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LF442CN Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 12 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. LF442A LF442 Supply Voltage ±22V ±18V Differential Input Voltage ±38V ±30V Input Voltage Range ±19V ±15V (Note 2) Output Short Circuit Continuous Continuous Duration (Note 3) H Package N Package T j max 150˚C 115˚C H Package N Package θ JA (Typical) (Note 4) (Note 5) 65˚C/W 165˚C/W 114˚C/W 152˚C/W θ JC (Typical) 21˚C/W Operating Temperature (Note 5) (Note 5) Range Storage −65˚C ≤T A≤150˚C −65˚C≤TA≤150˚C Temperature Range Lead Temperature 260˚C 260˚C (Soldering, 10 sec.) ESD Tolerance Rating to be determined DC Electrical Characteristics (Note 7) Symbol Parameter Conditions LF442A LF442 Units Min Typ Max Min Typ Max V OS Input Offset Voltage R S = 10 kΩ,TA = 25˚C 0.5 1.0 1.0 5.0 mV Over Temperature 7.5 mV ∆V OS/∆T Average TC of Input R S = 10 kΩ 7 10 7 µV/˚C Offset Voltage I OS Input Offset Current V S = ±15V T j = 25˚C 5 25 5 50 pA (Notes 7, 8) T j = 70˚C 1.5 1.5 nA T j = 125˚C 10 nA I B Input Bias Current V S = ±15V T j = 25˚C 10 50 10 100 pA (Notes 7, 8) T j = 70˚C 3 3 nA T j = 125˚C 20 nA R IN Input Resistance T j = 25˚C 10 12 10 12 Ω A VOL Large Signal Voltage V S = ±15V, VO = ±10V, 50 200 25 200 V/mV Gain R L = 10 kΩ,TA = 25˚C Over Temperature 25 200 15 200 V/mV V O Output Voltage Swing V S = ±15V, RL = 10 kΩ ±12 ±13 ±12 ±13 V V CM Input Common-Mode ±16 +18 ±11 +14 V Voltage Range −17 −12 V CMRR Common-Mode R S ≤ 10 kΩ 80 100 70 95 dB Rejection Ratio PSRR Supply Voltage (Note 9) 80 100 70 90 dB Rejection Ratio I S Supply Current 300 400 400 500 µA AC Electrical Characteristics (Note 7) Symbol Parameter Conditions LF442A LF442 Units Min Typ Max Min Typ Max Amplifier to Amplifier T A = 25˚C, f = 1 Hz-20 kHz −120 −120 dB Coupling (Input Referred) SR Slew Rate V S = ±15V, TA = 25˚C 0.8 1 0.6 1 V/µs GBW Gain-Bandwidth Product V S = ±15V, TA = 25˚C 0.8 1 0.6 1 MHz e n Equivalent Input Noise T A = 25˚C, RS = 100Ω,35 35 Voltage f = 1 kHz i n Equivalent Input Noise T A = 25˚C, f = 1 kHz 0.01 0.01 Current www.national.com 2 |
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