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NCD5700 Datasheet(PDF) 10 Page - ON Semiconductor |
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NCD5700 Datasheet(HTML) 10 Page - ON Semiconductor |
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10 / 18 page  NCD5700 www.onsemi.com 10 Applications and Operating Information This section lists the details about key features and operating guidelines for the NCD5700. High Drive Current Capability The NCD5700 driver family is equipped with many features which facilitate a superior performance IGBT driving circuit. Foremost amongst these features is the high drive current capability. The drive current of an IGBT driver is a function of the differential voltage on the output pin (VCC−VOH for source current, VOL−VEE for sink current) as shown in Figure 20. Figure 20 also indicates that for a given VOH/VOL value, the drive current can be increased by using higher VCC/VEE power supply). The drive current tends to drop off as the output voltage goes up (for turn−on event) or goes down (for turn−off event). As explained in many IGBT application notes, the most critical phase of IGBT switching event is the Miller plateau region where the gate voltage remains constant at a voltage (typically in 9−11 V range depending on IGBT design and the collector current), but the gate drive current is used to charge/discharge the Miller capacitance (CGC). By providing a high drive current in this region, a gate driver can significantly reduce the duration of the phase and help reducing the switching losses. The NCD5700 addresses this requirement by providing and specifying a high drive current in the Miller plateau region. Most other gate driver ICs merely specify peak current at the start of switching – which may be a high number, but not very relevant to the application requirement. It must be remembered that other considerations such as EMI, diode reverse recovery performance, etc., may lead to a system level decision to trade off the faster switching speed against low EMI and reverse recovery. However, the use of NCD5700 does not preclude this trade−off as the user can always tune the drive current by employing external series gate resistor. Important thing to remember is that by providing a high internal drive current capability, the NCD5700 facilitates a wide range of gate resistors. Another value of the high current at the Miller plateau is that the initial switching transition phase is shorter and more controlled. Finally, the high gate driver current (which is facilitated by low impedance internal FETs), ensures that even at high switching frequencies, the power dissipation from the drive circuit is primarily in the external series resistor and more easily manageable. Experimental results have shown that the high current drive results in reduced turn−on energy (EON) for the IGBT switching. Figure 20. Output Current vs. Output Voltage Drop When driving larger IGBTs for higher current applications, the drive current requirement is higher, hence lower RG is used. Larger IGBTs typically have high input capacitance. On the other hand, if the NCD5700 is used to drive smaller IGBT (lower input capacitance), the drive current requirement is lower and a higher RG is used. Thus, for most typical applications, the driver load RC time constant remains fairly constant. Caution must be exercised when using the NCD5700 with a very low load RC time constant. Such a load may trigger internal protection circuitry within the driver and disable the device. Figure 21 shows the recommended minimum gate resistance as a function of IGBT gate capacitance and gate drive trace inductance. Figure 21. Recommended Minimum Gate Resistance as a Function of IGBT Gate Capacitance |
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