VN50300T datasheet(4/4 Pages) VISHAY

Part #	VN50300T

Description	N-Channel 500-V (D-S) MOSFETs

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Manufacturer	VISHAY [Vishay Siliconix]

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4 / 4 page

VN50300L/VN50300T

Vishay Siliconix

www.vishay.com

11-4

Document Number: 70216

S-04279—Rev. D, 16-Jul-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

1

10

100

10

1

Threshold Region

Capacitance

Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)

Gate Charge

Load Condition Effects on Switching

t1 – Square Wave Pulse Duration (sec)

ID – Drain Current (A)

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

Qg – Total Gate Charge (pC)

td(on)

td(off)

tr

tf

10

1

0.01

01

7

2

345

6

–55

_C

VDS = 5 V

0.1

TJ = 150_C

12

10

8

0

010

50

6

4

20

30

40

2

C iss

C rss

VGS = 0 V

f = 1 MHz

10 K

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

1

0.01

0.1

1

100

10

1 K

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 156

_C/W

3. TJM – TA = PDMZthJA(t)

t1

t2

t1

Notes:

PDM

t2

30

25

20

0

25

200

15

10

50

100

150

5

VDS = 250 V

400 V

VDD = 25 V

RG = 25

W

VGS = 0 to 10 V

25

_C

125

_C

C oss

Single Pulse

0.01

ID = 10 mA

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