NCP81071

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3

TYPICAL APPLICATION CIRCUIT

1

2

3

4

8

7

6

5

INA

ENA

GND

INB

ENB

OUTA

OUTB

VDD

NCP81071

Table 2. ABSOLUTE MAXIMUM RATINGS

Value

Unit

Min

Max

Supply Voltage

VDD

−0.3

24

V

Output Current (DC)

Iout_dc

0.3

A

Reverse Current (Pulse< 1

ms)

6.0

A

Output Current (Pulse < 0.5

ms)

Iout_pulse

6.0

A

Input Voltage

INA, INB

−6.0

VDD+0.3

V

Enable Voltage

ENA, ENB

−0.3

VDD+0.3

Output Voltage

OUTA, OUTB

−0.3

VDD+0.3

V

Output Voltage (Pulse < 0.5

ms)

OUTA, OUTB

−3.0

VDD+3.0

V

Junction Operation Temperature

−40

150

°C

Storage Temperature

−65

160

Electrostatic Discharge

Human body model, HBM

4000

V

Charge device model, CDM

1000

OUTA OUTB Latch−up Protection

500

mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Table 3. RECOMMENDED OPERATING CONDITIONS

Parameter

Rating

Unit

VDD supply Voltage

4.5 to 20

V

INA, INB input voltage

−5.0 to VDD

V

ENA, ENB input voltage

0 to VDD

V

Junction Temperature Range

−40 to +140

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

Table 4. THERMAL INFORMATION

Package

SOIC−8

115

50

MSOP−8 EP

39

4.7

WDFN8 3x3

39

4.7