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NCP81381MNTXG Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP81381MNTXG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 16 page NCP81381 www.onsemi.com 3 PIN LIST AND DESCRIPTIONS (continued) Pin No. Description Symbol 19 PGND Power Ground 20 PGND Power Ground 21 PGND Power Ground 22 PGND Power Ground 23 PGND Power Ground 24 PGND Power Ground 25 VIN Conversion Supply Power Input 26 VIN Conversion Supply Power Input 27 VIN Conversion Supply Power Input 28 VIN Conversion Supply Power Input 29 VIN Conversion Supply Power Input 30 VIN Conversion Supply Power Input 31 PGND Power Ground 32 PHASEF Bootstrap Capacitor Return (must be connected to PHASED) 33 GH High Side FET Gate Access 34 PHASED Driver Phase Connection (must be connected to PHASEF) 35 BOOT Bootstrap Voltage 36 ZCD_EN PWM drive logic and zero current detection enable. 3−state input: PWM = High ³ GH is high, GL is low. PWM = Mid ³ Diode emulation mode. PWM = Low ³ GH is low. State of GL is dependent on states of SMOD# and ZCD_EN (see Table 1 LOGIC TABLE). 37 PGND Power Ground 38 TEST No connection should be made to this pin. No pad is needed on the PCB footprint ABSOLUTE MAXIMUM RATINGS (Electrical Information − all signals referenced to PGND unless noted otherwise) (Note 1) Pin Name Min Max Unit VCC, VCCD −0.3 6.5 V GH to PHASED (DC) −0.3 VBOOT − VSW + 0.3 V GH to PHASED (< 50 ns) −5 7.7 V VIN −0.3 30 V BOOT (DC) −0.3 35 V BOOT (< 20 ns) −0.3 40 V BOOT to PHASED (DC) −0.3 6.5 V VSW, PHASED, PHASEF (DC) −0.3 30 V VSW, PHASED, PHASEF (< 5 ns) −5 37 V All Other Pins −0.3 VVCC + 0.3 V Single−Pulse Drain−to−Source Avalanche Energy, High−Side FET (TJ = 25°C, VGS = 5 V, L = 0.1 mH, RG = 25 W, IL = 54 APK) 144 mJ Single−Pulse Drain−to−Source Avalanche Energy, Low−Side FET (TJ = 25°C, VGS = 5 V, L = 0.3 mH, RG = 25 W, IL = 31.5 APK) 180 mJ Single−Pulse Drain−to−Source Avalanche Energy, High−Side FET (TJ = 25°C, L = 0.15 mH, IL = 90 APK, VDS dV/dt= 30 V / 2 ns) 200 mJ Single−Pulse Drain−to−Source Avalanche Energy, Low−Side FET (TJ = 25°C, L = 150 nH, IL = 90 APK, VDS dV/dt= 30 V / 4 ns) 200 mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Absolute Maximum Ratings are not tested in production. |
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