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NCP81381MNTXG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP81381MNTXG
Description  Integrated Driver and MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP81381MNTXG Datasheet(HTML) 3 Page - ON Semiconductor

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NCP81381
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3
PIN LIST AND DESCRIPTIONS (continued)
Pin No.
Description
Symbol
19
PGND
Power Ground
20
PGND
Power Ground
21
PGND
Power Ground
22
PGND
Power Ground
23
PGND
Power Ground
24
PGND
Power Ground
25
VIN
Conversion Supply Power Input
26
VIN
Conversion Supply Power Input
27
VIN
Conversion Supply Power Input
28
VIN
Conversion Supply Power Input
29
VIN
Conversion Supply Power Input
30
VIN
Conversion Supply Power Input
31
PGND
Power Ground
32
PHASEF
Bootstrap Capacitor Return (must be connected to PHASED)
33
GH
High Side FET Gate Access
34
PHASED
Driver Phase Connection (must be connected to PHASEF)
35
BOOT
Bootstrap Voltage
36
ZCD_EN
PWM drive logic and zero current detection enable. 3−state input:
PWM = High
³ GH is high, GL is low.
PWM = Mid
³ Diode emulation mode.
PWM = Low
³ GH is low. State of GL is dependent on states of SMOD# and ZCD_EN
(see Table 1 LOGIC TABLE).
37
PGND
Power Ground
38
TEST
No connection should be made to this pin. No pad is needed on the PCB footprint
ABSOLUTE MAXIMUM RATINGS (Electrical Information − all signals referenced to PGND unless noted otherwise) (Note 1)
Pin Name
Min
Max
Unit
VCC, VCCD
−0.3
6.5
V
GH to PHASED (DC)
−0.3
VBOOT − VSW + 0.3
V
GH to PHASED (< 50 ns)
−5
7.7
V
VIN
−0.3
30
V
BOOT (DC)
−0.3
35
V
BOOT (< 20 ns)
−0.3
40
V
BOOT to PHASED (DC)
−0.3
6.5
V
VSW, PHASED, PHASEF (DC)
−0.3
30
V
VSW, PHASED, PHASEF (< 5 ns)
−5
37
V
All Other Pins
−0.3
VVCC + 0.3
V
Single−Pulse Drain−to−Source Avalanche Energy, High−Side FET
(TJ = 25°C, VGS = 5 V, L = 0.1 mH, RG = 25 W, IL = 54 APK)
144
mJ
Single−Pulse Drain−to−Source Avalanche Energy, Low−Side FET
(TJ = 25°C, VGS = 5 V, L = 0.3 mH, RG = 25 W, IL = 31.5 APK)
180
mJ
Single−Pulse Drain−to−Source Avalanche Energy, High−Side FET
(TJ = 25°C, L = 0.15 mH, IL = 90 APK, VDS dV/dt= 30 V / 2 ns)
200
mJ
Single−Pulse Drain−to−Source Avalanche Energy, Low−Side FET
(TJ = 25°C, L = 150 nH, IL = 90 APK, VDS dV/dt= 30 V / 4 ns)
200
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Absolute Maximum Ratings are not tested in production.


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