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BGA711N7 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # BGA711N7
Description  SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Download  43 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BGA711N7 Datasheet(HTML) 9 Page - Infineon Technologies AG

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BGA711N7
SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Electrical Characteristics
Data Sheet
9
Revision 3.1, 2013-01-31
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
2.3
ESD Integrity
Table 1
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Supply voltage
V
CC
-0.3
–
3.6
V
–
Supply current
I
CC
––10
mA
–
Pin voltage
V
PIN
-0.3
–
V
CC+0.3
V
All pins except RF input pins.
Pin voltage RF Input Pins
V
RFIN
-0.3
–
0.9
V
–
RF input power
P
RFIN
––4dBm
–
Junction temperature
T
j
––150
°C
–
Ambient temperature range
T
A
-30
–
85
°C
–
Storage temperature range
T
stg
-65
–
150
°C
–
Table 2
Thermal Resistance
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Thermal resistance junction to
soldering point
R
thJS
–240
–K/W
–
Table 3
ESD Integrity
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
ESD hardness HBM
1)
1) According to JESD22-A114
V
ESD-HBM
–
2000
–
V
All pins


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