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BGA616 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BGA616 Datasheet(HTML) 5 Page - Infineon Technologies AG |
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5 / 9 page  BGA616 Electrical Characteristics Data Sheet 5 Rev. 2.1, 2011-09-02 Maximum Ratings Note: All Voltages refer to GND-Node Thermal resistance 2 Electrical Characteristics Electrical characteristics at T A = 25 °C (measured in test circuit specified in Figure 2) V CC = 6 V, RBias = 33 Ω, Frequency = 2 GHz, unless otherwise specified Table 1 Maximum ratings Parameter Symbol Limit Value Unit Device voltage V D 4.5 V Device current I D 80 mA Current into pin In I in 0.7 mA Input power1) 1) Valid for Z S = ZL = 50 Ω, VCC = 6 V, RBias = 33 Ω P in 10 dBm Total power dissipation, T S < 78 °C 2) 2) T S is measured on the ground lead at the soldering point P tot 360 mW Junction temperature T J 150 °C Ambient temperature range T A -65... 150 °C Storage temperature range T STG -65... 150 °C ESD capability all pins (HBM: JESD22-A114) VESD 1000 V Table 2 Thermal resistance Parameter Symbol Value Unit Junction - soldering point1) 1) For calculation of R thJA please refer to Application Note Thermal Resistance R thJS 200 K/W Table 3 Electrical Characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Insertion power gain |S 21| 2 20.0 dB f = 0.1 GHz 19.0 dB f = 1 GHz 18.0 dB f = 2 GHz Noise figure ( Z S = 50 Ω) F 50 Ω 2.2 dB f = 0.1 GHz 2.5 dB f = 1 GHz 2.6 dB f = 2 GHz Output power at 1 dB gain compression P -1dB 18 dBm Output third order intercept point OIP 3 29 dBm Input return loss RL in 15 dB Output return loss RL out 15 dB Total device current I D 60 mA |
Similar Part No. - BGA616_11 |
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Similar Description - BGA616_11 |
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