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NCP367OPMUEATBG Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP367OPMUEATBG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 13 page NCP367 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS − NCP367OPMUEA (Min/Max limits values (−40 °C < TA < +85°C) and Vin = +3.5 V. Typical values are TA = +25°C, unless otherwise noted.) Characteristic Symbol Conditions Min Typ Max Unit Input Voltage Range Vin 1.2 28 V Undervoltage Lockout Threshold UVLO Vin falls down UVLO threshold 1.75 1.85 1.9 V Undervoltage Lockout Hysteresis UVLOhyst 60 100 mV Overvoltage Lockout Threshold NCP367OPMUEA OVLO Vin rises up OVLO threshold 3.65 3.8 3.95 V Overvoltage Lockout Hysteresis OVLOhyst 45 150 mV Vin versus Vout Resistance RDS(on) Enable Mode, Load Connected to Vout 50 100 m W Supply Quiescent Current Idd No Load 42 130 mA Disable Mode Idddis EN = 1.2 V 35 110 mA Overcurrent Threshold NCP367OPMUEA IOCP EN = low, Load Connected to Vout,, Rilim = 0 W, 1 A/ms, GS = 0.4 V 2.30 2.85 3.40 A Overcurrent Response Ireg 1 A/ ms, GS = low, Ilim = 1.51 A 5.0 % Current Limit Gain NCP367OPMUEA GSvalue GS = 1.2 V 2.55 Battery Overvoltage Threshold OVBAT 0 °C to 85°C 4.3 4.35 4.4 V Battery Overvoltage Hysteresis OVHYS 0 °C to 85°C 100 150 200 mV VBAT Pin Leakage VBATLEAK 20 nA VBAT Deglitch Time VBATDEG VBAT > OVBAT 0.2 2.0 4.0 ms FLAG Output Low Voltage Volflag Vin > OVLO Sink 1 mA on FLAG pin 400 mV FLAG Leakage Current FLAGleak FLAG level = 5 V 10 nA EN Voltage High Vih 1.2 V EN Voltage Low Vil 0.4 V EN Leakage Current ENleak 200 nA GS Voltage High Vih 1.2 V GS Voltage Low Vil 0.4 V GS Leakage Current GSleak 200 nA TIMINGS Start Up Delay ton From Vin > UVLO to Vout = 0.8xVin 15 30 45 ms FLAG going up Delay tstart From Vout > 0.2xVin to FLAG = 1.2 V 15 30 45 ms Rearming Delay tREARM OCP Active 15 30 45 ms Overcurrent Regulation Time tREG OCP Active 1.2 1.8 3.0 ms Output Turn Off Time toff From Vin > OVLO to Vout ≤ 0.3 V, Vin increasing from 3.5 V to 6.5 V at 3 V/ ms. 1.5 5.0 ms Alert Delay tstop From Vin > OVLO to FLAG ≤ 0.4 V, (see Figure 16) Vin increasing from 3.5 V to 6.5 V at 3 V/ms 1.5 ms Disable Time tdis From EN 0.4 to 1.2 V to Vout ≤ 0.3 V 3.0 ms Thermal Shutdown Temperature Tsd 150 °C Thermal Shutdown Hysteresis Tsdhyst 30 °C NOTE: Electrical parameters are guaranteed by correlation across the full range of temperature. |
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