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NCP434FCT2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP434FCT2G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page NCP434, NCP435 www.onsemi.com 4 ELECTRICAL CHARACTERISTICS Min and Max Limits apply for TA between −40°C to +85°C for VIN between 1.0 V to 3.6 V (Unless otherwise noted). Typical values are referenced to TA = +25°C and VIN = 3.3 V (Unless otherwise noted). Symbol Parameter Conditions Min Typ Max Unit POWER SWITCH RDS(on) Static drain−source on− state resistance VIN = 4 V TA = 25°C, I = 200 mA (Note 9) 27 30 m W VIN = 3.3 V TA = 25°C, I = 200 mA 29 34 VIN = 3.3 V TA = 85°C 38 VIN = 1.8 V TA = 25°C, I = 200 mA 43 52 VIN = 1.2 V TA = 25°C, I = 200 mA 8 0 120 VIN = 1.1 V TA = 25°C, I = 100 mA 110 RDIS Output discharge path EN = low VIN = 3.3 V, NCP435 only 65 90 W TR Output rise time VIN = 3.3 V CLOAD = 1 mF, RLOAD = 25 W (Note 8) 35 61 90 ms TF Output fall time VIN = 3.3 V CLOAD = 1 mF, RLOAD = 25 W (Note 8) 20 42 70 ms Ton Gate turn on VIN = 3.3 V Gate turn on + Output rise time 65 126 190 ms Ten Enable time VIN = 3.3 V From EN low to high to VOUT = 10% of fully on 30 66 100 ms VIH High−level input voltage 0.9 V VIL Low−level input voltage 0.5 V REN Pull down resistor 5.1 7 M W QUIESCENT CURRENT IQ Current consumption VIN = 3.3 V, EN = low, No load 0.15 0.6 mA VIN = 3.3 V, EN = high, No load 0.3 0.6 mA 8. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground 9. Guaranteed by design and characterization, not production tested. TIMINGS TON TEN TR TDIS TF VOUT EN VIN TOFF Figure 3. Enable, Rise and fall time |
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