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NCP457FCT2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP457FCT2G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 13 page NCP456R, NCP457 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS Min & Max Limits apply for TA between −40°C to +85°C for VIN and VBIAS between 0.75 V to 5.5 V (Unless otherwise noted). Typical values are referenced to TA = + 25°C, VIN = 3.3 V and VBIAS = 5 V (Unless otherwise noted). Symbol Parameter Conditions Min Typ Max Unit POWER SWITCH RDS(on) Static drain− source on−state resistance for each rail VIN = VBIAS = 5.5 V TA = 25 °C 24 33 m W TJ = 125°C 39 m W VIN = VBIAS = 3.3 V TA = 25°C 24 33 TJ = 125°C 39 VIN = VBIAS = 1.8 V TA = 25°C 25 34 TJ = 125°C 4 0 VIN = VBIAS = 1.5 V TA = 25°C 26 35 TJ = 125°C 41 VIN = VBIAS = 1.2 V TA = 25°C 28 40 TJ = 125°C 42 VIN = 1.0 V. VBIAS = 1.2 V TA = 25°C 30 40 TJ = 125°C 42 VIN = 0.8 V, VBIAS = 1.2 V TA = 25°C 35 45 TJ = 125°C 50 RDIS Output discharge path EN = low, NCP457 220 W TIMINGS TR Output rise time VIN = 5 V No cap on GATE pin 0.11 ms Gate capacitor = 1 nF 1.4 Gate capacitor = 10 nF 15.7 TF Output fall time CLOAD = 1 mF, RLOAD = 25 W (Note 8) 50 ms Ten Enable time From EN low to high to Vout = 10% of fully on− NCP456R. 1 0 nF gate capacitor 3 ms From EN low to high to Vout = 10% of fully on− NCP456R. 1 nF gate capacitor 300 ms From EN low to high to Vout = 10% of fully on− NCP456R. Without gate capacitor 51 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground 8. Guaranteed by design and characterization, not production tested. |
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