NCP3712ASN, SZNCP3712ASN

http://onsemi.com

2

Rating

Symbol

Value

Unit

Input−to−Output Voltage

105

V

Reverse Input−to−Vz. Voltage

−9.0

V

Reverse Input−to−Rboost Voltage

− 5.0

V

Output Load Current − Continuous

−300

mA

Enbl Input Current − Continuous

5.0

mA

Vz Input Current − Continuous

3.0

mA

Rboost Input Current − Continuous

10

mA

Junction Temperature

125

°C

Operating Ambient Temperature Range

− 40 to +85

°C

Storage Temperature Range

− 65 to +150

°C

Device Power Dissipation (Minimum Footprint)

300

mW

Derate Above 25

°C

−

2.4

mW/

°C

Latchup Performance:

Positive

Negative

200

200

mA

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device contains ESD protection and exceeds the following tests:

Human Body Model 1500 V per MIL−STD−883, Method 3015.

Machine Model Method 150 V.

Figure 2. Typical Applications Circuit for Load Dump Transient Protection

NCP3712

ASN

A+

A−

1N4004

FB*

*FB = MMZ2012 Y601B

FB*

0.01

mF

TYP

0.027

mF

TYP

18 V

TYP

Enbl

N.C.

1.0 k TYP

0−500

W

KEY

3

1

2

6

5

4

Figure 3. Enable NOT Switching Waveforms

Figure 4. Load Dump Waveforms

30

50

0

TIME (

ms)

15

10

TIME (

ms)

350

0

80

40

20

0

13.5 V SUPPLY RAIL

5

0

15

5

10

20

25

35

40

250

300

50

100

200

150

60

100

120

45

50%

AMPLITUDE

LOAD

DEPENDENT

EXP DECAY

DEVICE OUTPUT

VOLTAGE

“ENABLE

NOT”

INPUT

tpLH

13.5 V

SUPPLY

RAIL

TYPICAL

INPUT

TRANSIENT

LOAD

DEPENDENT

OUTPUT

EXP DECAY