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NCP45525IMNTWG-H Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCP45525IMNTWG-H
Description  Advanced Load Management
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP45525IMNTWG-H Datasheet(HTML) 2 Page - ON Semiconductor

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NCP45524, NCP45525
http://onsemi.com
2
Table 1. PIN DESCRIPTION
Pin
Name
Function
1, 9
VIN
Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9
2
EN
NCP45524−H & NCP45525−H − Active−high digital input used to turn on the MOSFET, pin
has an internal pull down resistor to GND
NCP45524−L & NCP45525−L − Active−low digital input used to turn on the MOSFET, pin has
an internal pull up resistor to VCC
3
VCC
Supply voltage to controller (3.0 V − 5.5 V)
4
GND
Controller ground
5
BLEED
Load bleed connection; must be tied to VOUT either directly or through a resistor ≤ 100 MW.
6
PG
NCP45524 − Active−high, open−drain output that indicates when the gate of the MOSFET is
fully charged, external pull up resistor
≥ 1 kW to an external voltage source required; tie to
GND if not used
SR
NCP45525 − Slew rate adjustment; float if not used
7, 8
VOUT
Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage Range
VCC
−0.3 to 6
V
Input Voltage Range
VIN
−0.3 to 18
V
Output Voltage Range
VOUT
−0.3 to 18
V
EN Digital Input Range
VEN
−0.3 to (VCC + 0.3)
V
PG Output Voltage Range (Note 1)
VPG
−0.3 to 6
V
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
RθJA
40.0
°C/W
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3)
RθJA
72.7
°C/W
Thermal Resistance, Junction−to−Case (VIN Paddle)
RθJC
5.3
°C/W
Continuous MOSFET Current @ TA = 25°C
IMAX
6.0
A
Total Power Dissipation @ TA = 25°C (Notes 2 and 4)
Derate above TA = 25°C
PD
2.50
24.9
W
mW/
°C
Total Power Dissipation @ TA = 25°C (Notes 3 and 4)
Derate above TA = 25°C
PD
1.37
13.8
W
mW/
°C
Storage Temperature Range
TSTG
−40 to 150
°C
Lead Temperature, Soldering (10 sec.)
TSLD
260
°C
ESD Capability, Human Body Model (Notes 5 and 6)
ESDHBM
3.0
kV
ESD Capability, Machine Model (Note 5)
ESDMM
200
V
ESD Capability, Charged Device Model (Note 5)
ESDCDM
1.0
kV
Latch−up Current Immunity (Notes 5 and 6)
LU
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. NCP45524 only. PG is an open−drain output that requires an external pull up resistor
≥ 1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Specified for derating purposes only, ensure that IMAX is never exceeded.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Machine Model tested per JESD22−A115
ESD Charged Device Model tested per JESD22−C101
Latch−up Current tested per JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.


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