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NCP45525IMNTWG-H Datasheet(PDF) 2 Page - ON Semiconductor |
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NCP45525IMNTWG-H Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 14 page NCP45524, NCP45525 http://onsemi.com 2 Table 1. PIN DESCRIPTION Pin Name Function 1, 9 VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 9 2 EN NCP45524−H & NCP45525−H − Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND NCP45524−L & NCP45525−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC 3 VCC Supply voltage to controller (3.0 V − 5.5 V) 4 GND Controller ground 5 BLEED Load bleed connection; must be tied to VOUT either directly or through a resistor ≤ 100 MW. 6 PG NCP45524 − Active−high, open−drain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor ≥ 1 kW to an external voltage source required; tie to GND if not used SR NCP45525 − Slew rate adjustment; float if not used 7, 8 VOUT Source of MOSFET connected to load Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage Range VCC −0.3 to 6 V Input Voltage Range VIN −0.3 to 18 V Output Voltage Range VOUT −0.3 to 18 V EN Digital Input Range VEN −0.3 to (VCC + 0.3) V PG Output Voltage Range (Note 1) VPG −0.3 to 6 V Thermal Resistance, Junction−to−Ambient, Steady State (Note 2) RθJA 40.0 °C/W Thermal Resistance, Junction−to−Ambient, Steady State (Note 3) RθJA 72.7 °C/W Thermal Resistance, Junction−to−Case (VIN Paddle) RθJC 5.3 °C/W Continuous MOSFET Current @ TA = 25°C IMAX 6.0 A Total Power Dissipation @ TA = 25°C (Notes 2 and 4) Derate above TA = 25°C PD 2.50 24.9 W mW/ °C Total Power Dissipation @ TA = 25°C (Notes 3 and 4) Derate above TA = 25°C PD 1.37 13.8 W mW/ °C Storage Temperature Range TSTG −40 to 150 °C Lead Temperature, Soldering (10 sec.) TSLD 260 °C ESD Capability, Human Body Model (Notes 5 and 6) ESDHBM 3.0 kV ESD Capability, Machine Model (Note 5) ESDMM 200 V ESD Capability, Charged Device Model (Note 5) ESDCDM 1.0 kV Latch−up Current Immunity (Notes 5 and 6) LU 100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. NCP45524 only. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source. 2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 4. Specified for derating purposes only, ensure that IMAX is never exceeded. 5. Tested by the following methods @ TA = 25°C: ESD Human Body Model tested per JESD22−A114 ESD Machine Model tested per JESD22−A115 ESD Charged Device Model tested per JESD22−C101 Latch−up Current tested per JESD78 6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance for VIN and VOUT should be expected and these devices should be treated as ESD sensitive. |
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