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NCP382HMN10A-ATXG Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP382HMN10A-ATXG Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 12 page NCP382 www.onsemi.com 3 MAXIMUM RATINGS Rating Symbol Value Unit From IN to OUT1, From IN to OUT2 Supply Voltage (Note 1) VIN , VOUT1,VOUT2 −7.0 to +7.0 V IN, OUT1,OUT2, EN1, EN2, FLAG1, FLAG2 (Note 1) VIN, VOUT1, VOUT2, VEN1, VEN2, VFLAG1, VFLAG2 −0.3 to +7.0 V FLAG1, FLAG2 sink current ISINK 1.0 mA ESD Withstand Voltage (IEC 61000−4−2) (output only, when bypassed with 1.0 mF capacitor minimum) ESD IEC 15 Air, 8 contact kV Human Body Model (HBM) ESD Rating are (Note 2) ESD HBM 2000 V Machine Model (MM) ESD Rating are (Note 2) ESD MM 200 V Latch−up protection (Note 3) − Pins IN, OUT1, OUT2, FLAG1, FLAG2 − EN1, EN2 LU 100 mA Maximum Junction Temperature (Note 4) TJ −40 to + TSD °C Storage Temperature Range TSTG −40 to + 150 °C Moisture Sensitivity (Note 5) MSL Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. According to JEDEC standard JESD22−A108. 2. This device series contains ESD protection and passes the following tests: Human Body Model (HBM) +/−2.0 kV per JEDEC standard: JESD22−A114 for all pins. Machine Model (MM) +/−200 V per JEDEC standard: JESD22−A115 for all pins. 3. Latch up Current Maximum Rating: $100 mA per JEDEC standard: JESD78 class II. 4. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. 5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020. OPERATING CONDITIONS Symbol Parameter Conditions Min Typ Max Unit VIN Operational Power Supply 2.5 5.5 V VENX Enable Voltage 0 5.5 TA Ambient Temperature Range −40 25 +85 °C ISINK FLAG sink current 1 mA CIN Decoupling input capacitor 1 mF COUTX Decoupling output capacitor USB port per Hub 120 mF RqJA Thermal Resistance Junction−to−Air DFN−8 package (Notes 6 and 7) 140 °C/W SOIC−8 package (Notes 6 and 7) 210 °C/W TJ Junction Temperature Range −40 25 +125 °C IOUTX Recommended Maximum DC current DFN−8 package 2 A SOIC−8 package 1.5 A PD Power Dissipation Rating (Note 8) TA v 25°C DFN−8 package 850 mW SOIC−8 package 570 mW TA = 85°C DFN−8 package 428 mW SOIC−8 package 285 mW 6. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation. 7. The RqJA is dependent of the PCB heat dissipation. Announced thermal resistance is the unless PCB dissipation and can be improve with final PCB layout. 8. The maximum power dissipation (PD) is given by the following formula: P D + T JMAX * TA RqJA |
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