MTBA6C15H8 datasheet(2/14 Pages) CYSTEKEC

Part #	MTBA6C15H8

Description	N- And P-Channel Enhancement Mode MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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2 / 14 page

CYStech Electronics Corp.

Spec. No. : C938H8

Issued Date : 2016.09.06

Revised Date : 2016.09.12

Page No. : 2/14

MTBA6C15H8

CYStek Product Specification

Absolute Maximum Ratings (TC=25

°C, unless otherwise noted)

Limits

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Breakdown Voltage

BVDSS

150

-150

Gate-Source Voltage

VGS

±

20

±

20

V

TA=25

°C, VGS=10V (-10V)

2.4

-2.0

TA=70

°C, VGS=10V (-10V)

IDSM

1.9

-1.6

TC=25

°C, VGS=10V (-10V)

6.8

-5.8

Continuous Drain Current

TC=100

°C, VGS=10V (-10V)

ID

4.3

-3.7

Pulsed Drain Current (Note 1 & 2)

IDM

10

-8

A

TA=25

°C

2.5 (Note 3)

TA=70

°C

PDSM

1.6 (Note 3)

TC=25

°C

21

Power Dissipation

TC=100

°C

PD

8.4

W

Operating Junction and Storage Temperature Range

Tj; Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-case, max

RθJC

6

Thermal Resistance, Junction-to-ambient, max

RθJA

50 (Note 3)

°C/W

Note : 1. Pulse width limited by maximum junction temperature

2. Duty cycle≤1%

3. Surface mounted on 1 in² copper pad of FR-4 board; 125

°C/W when mounted on minimum copper pad.

N-Channel Electrical Characteristics (Tc=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

150

-

VGS=0V, ID=250μA

VGS(th)

1.0

-

2.5

V

VDS=VGS, ID=250μA

IGSS

-

±100

nA

VGS=±20V, VDS=0V

-

1

VDS=120V, VGS=0V

IDSS

-

25

μA

VDS=120V, VGS=0V, Tj=125

°C

-

172

220

ID=2.5A, VGS=10V

*RDS(ON)

-

178

235

m

Ω

ID=2A, VGS=4.5V

*GFS

-

6.3

-

S

VDS=10V, ID=2A

Dynamic

Ciss

-

439

-

Coss

-

43

-

Crss

-

26

-

pF

VDS=25V, VGS=0V, f=1MHz

*td(ON)

-

6.4

-

*tr

-

16.4

-

*td(OFF)

-

44.8

-

*tf

-

74

-

ns

VDS=75V, ID=2.5A, VGS=10V, RG=6Ω

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