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TPS650243-Q1 Datasheet(PDF) 2 Page - Texas Instruments

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Part # TPS650243-Q1
Description  POWER MANAGEMENT ICs FOR Li-ION POWERED SYSTEMS
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS650243-Q1 Datasheet(HTML) 2 Page - Texas Instruments

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TPS650241-Q1, TPS650243-Q1, TPS650244-Q1
SLVS994A
– SEPTEMBER 2009 – REVISED MARCH 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE
UNIT
Input voltage range on all pins except A/PGND, VLDO1 and VLDO2 pins with respect to
–0.3 to 7
V
AGND
Voltage range on pins VLDO1 and VLDO2 with respect to AGND
–0.3 to 3.6
V
Current at VINDCDC1, L1, PGND1, VINDCDC2, L2, PGND2, VINDCDC3, L3, PGND3
2000
mA
Peak current at all other pins
1000
mA
Continuous total power dissipation
See Dissipation Rating Table
TJ
Operating junction temperature
–40 to 125
°C
Tst
Storage temperature
–65 to 150
°C
Lead temperature 1,6 mm (1/16-inch) from case for 10 seconds
260
°C
(1)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATINGS
TJ ≤ 25°C
DERATING FACTOR
TJ = 70°C
TJ = 85°C
PACKAGE(1)
RθJA
POWER RATING
ABOVE TJ = 25°C
POWER RATING
POWER RATING
RHB
35
°C/W
2.85 W
28 mW/
°C
1.57 W
1.14 W
(1)
The thermal resistance junction to ambient of the RHB package is measured on a high K board. The thermal resistance junction to
power pad is 1.5
°C/W.
2
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Copyright
© 2009–2011, Texas Instruments Incorporated
Product Folder Link(s): TPS650241-Q1 TPS650243-Q1 TPS650244-Q1


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