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CSD16327Q3 Datasheet(PDF) 6 Page - Texas Instruments |
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CSD16327Q3 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 13 page TC - Case Temperature (qC) -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 D012 VDS - Drain-to-Source Voltage (V) 0.1 1 10 100 0.1 1 10 100 1000 D010 100 ms 10 ms 1 ms 100 µs 10 µs TAV - Time in Avalanche (ms) 0.01 0.1 1 10 100 D011 TC = 25q C TC = 125q C TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1 1.2 1.4 1.6 D008 VGS = 4.5 V VSD - Source-to-Drain Voltage (V) 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 100 D009 TC = 25°C TC = 125°C 6 CSD16327Q3 SLPS371A – DECEMBER 2011 – REVISED SEPTEMBER 2016 www.ti.com Product Folder Links: CSD16327Q3 Submit Documentation Feedback Copyright © 2011–2016, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) ID = 24 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single pulse, max RθJC = 1.7°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature |
Similar Part No. - CSD16327Q3 |
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Similar Description - CSD16327Q3 |
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