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IRF7494 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF7494
Description  HEXFET Power MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7494 Datasheet(HTML) 1 Page - International Rectifier

  IRF7494 Datasheet HTML 1Page - International Rectifier IRF7494 Datasheet HTML 2Page - International Rectifier IRF7494 Datasheet HTML 3Page - International Rectifier IRF7494 Datasheet HTML 4Page - International Rectifier IRF7494 Datasheet HTML 5Page - International Rectifier IRF7494 Datasheet HTML 6Page - International Rectifier IRF7494 Datasheet HTML 7Page - International Rectifier IRF7494 Datasheet HTML 8Page - International Rectifier  
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www.irf.com
1
01/28/03
IRF7494
HEXFET® Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Notes
 through † are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
PD - TBD
FOR REVIEW ONLY
VDSS
RDS(on) max
ID
150V
44m
:@V
GS = 10V
5.2A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 100°C
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
dv/dt
Peak Diode Recovery dv/dt
h
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
e
–––
50
3.0
-55 to + 175
0.02
3.0
Max.
5.2
3.7
42
150
± 20
150
03/11/03
PD - 94641


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