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TPS793-Q1

SGLS162I – APRIL 2003 – REVISED MARCH 2016

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Copyright © 2003–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

–0.3

6

V

Voltage range at EN

–0.3

V

Voltage on OUT

–0.3

6

V

Peak output current

Internally limited

Continuous total power dissipation

See Thermal Information

Operating junction temperature

–40

150

°C

Storage temperature

–65

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

±2000

V

Charged-device model (CDM), per AEC Q100-011

±250

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Input supply voltage

2.7

5.5

V

Enable supply voltage

0

V

Output voltage

5

V

Output current

0

200

mA

Operating junction temperature

–40

125

°C

Input capacitor

0.1

1

µF

Output capacitor

2.2

10

µF

Noise reduction capacitor

0

10

nF

Feed-forward capacitor

15

pF

Lower feedback resistor

30.1

k

Ω

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

TPS793xx-Q1

UNIT

DBV (SOT-23)

6 PINS

Junction-to-ambient thermal resistance

225.1

°C/W

Junction-to-case (top) thermal resistance

78.4

°C/W

Junction-to-board thermal resistance

54.7

°C/W

Junction-to-top characterization parameter

3.3

°C/W

Junction-to-board characterization parameter

53.8

°C/W

Junction-to-case (bottom) thermal resistance

N/A

°C/W