TPS79015, TPS79018, TPS79025, TPS79028, TPS79030

ULTRALOW-POWER LOW-NOISE 50-mA

LOW-DROPOUT LINEAR REGULATORS

SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001

1

POST OFFICE BOX 655303

(TPS79030)

(TPS79030)

Temperature Range

description

The TPS790xx family of low-dropout (LDO)

voltage

regulators

offers

the

benefits

of

low-dropout voltage, ultralow-power operation,

low-output noise, and miniaturized packaging.

These regulators feature low-dropout voltages

and ultralow quiescent current compared to

conventional LDO regulators. An internal resistor,

in conjunction with an external bypass capacitor,

creates a low-pass filter to reduce the noise. The

TPS79030 exhibits only 56

voltage noise using 0.01

µF bypass and 10 µF

output capacitors. Offered in a 5-terminal small

outline integrated-circuit SOT-23 package, the

TPS790xx

series

devices

are

ideal

for

micropower operations, low output noise, and

where board space is limited.

The usual PNP pass transistor has been replaced

by a PMOS pass element. Because the PMOS

pass element behaves as a low-value resistor, the

dropout voltage is very low, typically 57 mV at

50 mA of load current (TPS79030), and is directly

proportional to the load current. The quiescent

current is ultralow (17

µA typically) and is stable

over the entire range of output load current (0 mA

to 50 mA). Intended for use in portable systems

such as laptops and cellular phones, the

ultralow-dropout voltage feature and ultralow-

power operation result in a significant increase in

system battery operating life.

Copyright

 2001, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

3

2

4

5

DBV PACKAGE

(TOP VIEW)

1

IN

GND

EN

OUT

BYPASS

0

200

400

600

800

1000

1200

100

1k

10k

100k

f – Frequency – Hz

VI = 4 V

Co = 4.7 µF

C(byp) = 0.1 µF

TPS78930

OUTPUT SPECTRAL NOISE DENSITY

vs

FREQUENCY

IO = 1 mA

IO = 50 mA

TJ – Junction Temperature – °C

15

22

TPS79030

GROUND CURRENT

vs

JUNCTION TEMPERATURE

VI = 4 V

Co = 4.7 µF

21

20

19

18

17

16

IO = 1 mA

IO = 50 mA

–40

5

–25

20

35

65

110 125

50

–10

80

95