CJB04N65 datasheet(2/2 Pages) ZPSEMI

Part #	CJB04N65

Description	N -Channel Power MOSFET

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Manufacturer	ZPSEMI [ZP Semiconductor]

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Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

650

Drain-source diode forward voltage(note2)

VSD

VGS = 0V, IS =4.0A

1.5

V

Zero gate voltage drain current

IDSS

VDS =600V, VGS =0V

25

µA

Gate-body leakage current (note2)

IGSS

VDS =0V, VGS =±30V

±

100

nA

On characteristics (note2)

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =250µA

2.0

4.0

V

Static drain-source on-resistance

RDS(on)

VGS =10V, ID =2.0A

3.0

Ω

Dynamic characteristics (note 3)

Input capacitance

Ciss

760

Output capacitance

Coss

180

Reverse transfer capacitance

Crss

VDS =25V,VGS =0V,f =1MHz

20

pF

Switching characteristics (note 3)

Total gate charge

Qg

5.0

10

Gate-source charge

Qgs

2.7

Gate-drain charge

Qgd

VDS =480V,VGS =10V,ID =4.0A

2.0

nC

Turn-on delay time (note3)

td(on)

20

Turn-on rise time (note3)

tr

10

Turn-off delay time (note3)

td(off)

40

Turn-off fall time (note3)

tf

VDD=300V, VGS=10V,

RG=9.1Ω, ID =4.0A

20

ns

Notes :

1.

L=

30mH, IL=4A, VDD=100V, RG=25Ω,Starting TJ=25

℃.

2.

Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

3.

These parameters have no way to verify.

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