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SBR660CTLQ-13 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # SBR660CTLQ-13
Description  Reduced high temperature reverse leakage; Increased reliability
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

SBR660CTLQ-13 Datasheet(HTML) 2 Page - Diodes Incorporated

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SBR is a registered trademark of Diodes Incorporated.
SBR660CTLQ
Document number: DS36093 Rev. 2 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
SBR660CTLQ
Maximum Ratings (Per Leg) (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
60
V
Average Rectified Output Current
(Per Leg)
(Total)
IO
3
6
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
80
A
Repettitive Peak Avalanche Power (1μs, +25°C)
PARM
8550
W
Non-Repetitive Avalanche Energy
(TJ = +25°C, IAS = 5A, L = 10mH)
EAS
116
mJ
Thermal Characteristics (Per Leg)
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance (per leg) (Note 5)
RθJC
2
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics (Per Leg) (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Leakage Current (Note 6)
IR
-
-
-
5
0.3
-
mA
VR = 60V, TJ = +25°C
VR = 60V, TJ = +125°C
Forward Voltage Drop
VF
-
-
0.57
V
IF = 3A, TJ = +25°C
Notes:
5. Device mounted on Polymide substrate, 125mm
2 Copper pad, double-sided, PC Board.
6. Short duration pulse test used to minimize self-heating effect.
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
01
2
3
4
5
6
I
, AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 1 Forward Power Dissipation
0.0001
0.001
0.01
0.1
1
0
100
200
300
400 500
600
700 800
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
T = -55°C
A


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