Datasheet

2/31

BR25G256-3

TSZ02201-0R2R0G100640-1-2

04.Dec.2014 Rev.002

©2013 ROHM Co., Ltd. All rights reserved.

TSZ22111･15･001

www.rohm.com

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Ratings

Unit

Remarks

Supply Voltage

-0.3 to +6.5

V

Power Dissipation

Pd

0.80 (DIP-T8)

W

When using at Ta=25°C or higher 8.0mW to be reduced per 1°C.

0.45 (SOP8)

When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.

0.45 (SOP-J8)

When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.

0.33 (TSSOP-B8)

When using at Ta=25°C or higher 3.3mW to be reduced per 1°C.

Storage Temperature

Tstg

- 65 to +150

°C

Operating Temperature

Topr

- 40 to +85

°C

Input Voltage /

Output Voltage

‐

- 0.3 to Vcc+1.0

V

The Max value of Input Voltage/Output Voltage is not over 6.5V.

When the pulse width is 50ns or less, the Min value of Input

Voltage/Output Voltage is not under -1.0V.

Junction temperature

Tjmax

150

°C

Junction temperature at the storage condition

Electrostatic discharge

voltage

(human body model)

-4000 to +4000

V

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over

the absolute maximum ratings.

Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V)

Parameter

Limits

Unit

Min

Typ

Max

Write Cycles

(Note1)

1,000,000

-

-

Times

Data Retention

(Note1)

100

-

-

Years

(Note1) Not 100% TESTED

Recommended Operating Ratings

Parameter

Symbol

Ratings

Unit

Min

Max

Power Source Voltage

Vcc

1.6

5.5

V

Input Voltage

0

Vcc

V

Bypass Capacitor

C

0.1

-

µF