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MBR30H100CT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR30H100CT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR30H100CT FEATURES · Low forward voltage · Low power loss,high efficiency · High surge capability · 175℃ operating junction temperature · Pb-Free Package is Available · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS · Case: Epoxy, Molded · Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable · Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current (Per Leg) (Total) 15 30 A IFSM Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method) 250 A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs |
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