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CJD01N80 Datasheet(PDF) 3 Page - ZP Semiconductor |
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CJD01N80 Datasheet(HTML) 3 Page - ZP Semiconductor |
3 / 3 page 0123 4567 0.0 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 0 1 2 3 4 5 0 200 400 600 800 1000 1200 1400 0.01 0.1 1 3456 789 10 0 5 10 15 20 25 30 35 40 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 V DS =10V Pulsed GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100℃ T a =25℃ I D =250uA Threshold Voltage JUNCTION TEMPERATURE T J ( ) ℃ 2 Pulsed SOURCE TO DRAIN VOLTAGE V SD (mV) V SD I S —— T a =100℃ T a =25℃ Pulsed I D =0.5A R DS(ON) —— V GS GATE TO SOURCE VOLTAGE V GS (V) T a =100℃ T a =25℃ T a =25℃ Pulsed DRAIN CURRENT I D (A) I D —— R DS(ON) V GS =10V V GS =5.5V Pulsed Output Characteristics DRAIN TO SOURCE VOLTAGE V DS (V) V GS = 6V、8V、10V V GS =5V 3 of 3 sales@zpsemi.com www.zpsemi.com CJD01N80 |
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